該文針對逆變電源向大功率發(fā)展時受單管IGBT(絕緣門極雙極型晶體管) 電流容量限制的問題,受MOSFET(電力場效應(yīng)晶體管) 并聯(lián)擴流成功應(yīng)用的啟發(fā),提出采用多IGBT的并聯(lián)技術(shù),解決進一步提高逆變電源容量的難題。在分析IGBT工作機理基礎(chǔ)上,給出了電路拓撲及其工作原理,并對并聯(lián)器件產(chǎn)生的均流問題進行了重點分析,提出了相應(yīng)的解決方法,
推薦了IGBT并聯(lián)應(yīng)用的厚膜集成驅(qū)動電路。通過理論分析和計算機仿真結(jié)果表明:在大容量逆變電源中采用IGBT并聯(lián)技術(shù)是有效可行的,它可以顯著增加整機的電流容量,提高電源的有效功率。
關(guān)鍵詞:絕緣門極雙極型晶體管; 并聯(lián); 逆變電源; 仿真

ABSTRACT:When inverter power is developed as a large output power, it is usually limited by the electric current capacity of a single IGBT( Insulated Gate B ipolar Transistor). Illuminated by the success ofMOSFETs
app lied in parallel, this paper aims at to solve this p roblem by using the parallel method of IGBTs. Based on
analyzing the IGBTps operating mechanism, this paper also describes the electric circuit and its operating p rincip le. The reasons led to current unbalances of each IGBT in parallel are analyzed, and the corresponding
solutions and the hybrid IC are p roposed. The theory analysis and the results of the circuit simulation show that
the high capacity inverter power with the parallel method of IGBTs is available, in this way it can enlarge the electric current capacity of the whole machine and increase the power of inverter.
KEYWORDS: IGBT; Parallel; Inverter power; Simulation