服務(wù)介紹
隨著技術(shù)的進(jìn)步，各類半導(dǎo)體功率器件開始由實(shí)驗(yàn)室階段走向商業(yè)應(yīng)用，尤其以SiC為代表的第三代半導(dǎo)體器件國產(chǎn)化的腳步加快。但車用分立器件市場均被國外巨頭所把控，國產(chǎn)器件很難分一杯羹，主要的原因之一即是可靠性得不到認(rèn)可。
測試周期：
2-3個月，提供全面的認(rèn)證計(jì)劃、測試等服務(wù)
產(chǎn)品范圍：
二、三極管、晶體管、MOS、IBGT、TVS管、Zener、閘流管等半導(dǎo)體分立器件
測試項(xiàng)目：
| 序號 | 測試項(xiàng)目 | 縮寫 | 樣品數(shù)/批 | 批數(shù) | 測試方法 |
| 1 | Pre- and Post-Stress Electrical and Photometric Test | TEST | 所有應(yīng)力試驗(yàn)前后均進(jìn)行測試 | 用戶規(guī)范或供應(yīng)商的標(biāo)準(zhǔn)規(guī)范 | |
| 2 | Pre-conditioning | PC | SMD產(chǎn)品在7、8、9和10試驗(yàn)前預(yù)處理 | JESD22-A113 | |
| 3 | External Visual | EV | 每項(xiàng)試驗(yàn)前后均進(jìn)行測試 | JESD22-B101 | |
| 4 | Parametric Verification | PV | 25 | 3 Note A | 用戶規(guī)范 |
| 5 | High Temperature Reverse Bias | HTRB | 77 | 3 Note B | MIL-STD-750-1 M1038 Method A |
| 5a | AC blocking voltage | ACBV | 77 | 3 Note B | MIL-STD-750-1 M1040 Test Condition A |
| 5b | High Temperature Forward Bias | HTFB | 77 | 3 Note B | JESD22 A-108 |
| 5c | Steady State Operational | SSOP | 77 | 3 Note B | MIL-STD-750-1 M1038 Condition B（Zeners） |
| 6 | High Temperature Gate Bias | HTGB | 77 | 3 Note B | JESD22 A-108 |
| 7 | Temperature Cycling | TC | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
| 7a | Temperature Cycling Hot Test | TCHT | 77 | 3 Note B | JESD22 A-104 Appendix 6 |
| 7a alt | TC Delamination Test | TCDT | 77 | 3 Note B | JESD22 A-104 Appendix 6 J-STD-035 |
| 7b | Wire Bond Integrity | WBI | 5 | 3 Note B | MIL-STD-750 Method 2037 |
| 8 | Unbiased Highly Accelerated Stress Test | UHAST | 77 | 3 Note B | JESD22 A-118 |
| 8 alt | Autoclave | AC | 77 | 3 Note B | JESD22 A-102 |
| 9 | Highly Accelerated Stress Test | HAST | 77 | 3 Note B | JESD22 A-110 |
| 9 alt | High Humidity High Temp. Reverse Bias | H3TRB | 77 | 3 Note B | JESD22 A-101 |
| 10 | Intermittent Operational Life | IOL | 77 | 3 Note B | MIL-STD-750 Method 1037 |
| 10 alt | Power and Temperature Cycle | PTC | 77 | 3 Note B | JESD22 A-105 |
| 11 | ESD Characterization | ESD | 30 HBM | 1 | AEC-Q101-001 |
| 30 CDM | 1 | AEC-Q101-005 | |||
| 12 | Destructive Physical Analysis | DPA | 2 | 1 NoteB | AEC-Q101-004 Section 4 |
| 13 | Physical Dimension | PD | 30 | 1 | JESD22 B-100 |
| 14 | Terminal Strength | TS | 30 | 1 | MIL-STD-750 Method 2036 |
| 15 | Resistance to Solvents | RTS | 30 | 1 | JESD22 B-107 |
| 16 | Constant Acceleration | CA | 30 | 1 | MIL-STD-750 Method 2006 |
| 17 | Vibration Variable Frequency | VVF | 項(xiàng)目16至19是密封包裝的順序測試。 （請參閱圖例頁面上的注釋H.） | JEDEC JESD22-B103 | |
| 18 | Mechanical Shock | MS | JEDEC JESD22-B104 | ||
| 19 | Hermeticity | HER | JESD22-A109 | ||
| 20 | Resistance to Solder Heat | RSH | 30 | 1 | JESD22 A-111 (SMD) B-106 (PTH) |
| 21 | Solderability | SD | 10 | 1 Note B | J-STD-002 JESD22B102 |
| 22 | Thermal Resistance | TR | 10 | 1 | JESD24-3,24-4,26-6視情況而定 |
| 23 | Wire Bond Strength | WBS | 最少5個器件的10條焊線 | 1 | MIL-STD-750 Method 2037 |
| 24 | Bond Shear | BS | 最少5個器件的10條焊線 | 1 | AEC-Q101-003 |
| 25 | Die Shear | DS | 5 | 1 | MIL-STD-750 |
| Method 2017 | |||||
| 26 | Unclamped Inductive Switching | UIS | 5 | 1 | AEC-Q101-004 Section 2 |
| 27 | Dielectric Integrity | DI | 5 | 1 | AEC-Q101-004 Section 3 |
| 28 | Short Circuit Reliability Characterization | SCR | 10 | 3 Note B | AEC-Q101-006 |
| 29 | Lead Free | LF | AEC-Q005 | ||
